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IKY75N120CH7XKSA1

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IKY75N120CH7XKSA1

IGBT TRENCH FS 1200V 83A TO247-4

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IKY75N120CH7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) from the TRENCHSTOP™ series. This component features a collector-emitter voltage of 1200 V and a continuous collector current of 83 A, with a pulsed capability up to 300 A. It is designed for demanding applications, offering a maximum power dissipation of 549 W and a low on-state voltage of 2.15V at 75A. The gate charge is specified at 550 nC, contributing to its switching characteristics with typical turn-on and turn-off delays of 42 ns and 367 ns respectively, and a reverse recovery time of 90 ns. Switching energy is rated at 1.81 mJ (on) and 2.02 mJ (off). The device is packaged in a PG-TO247-4-U10 through-hole configuration and operates within a temperature range of -40°C to 175°C. This IGBT is commonly utilized in industrial motor drives and power factor correction circuits.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)90 ns
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 75A
Supplier Device PackagePG-TO247-4-U10
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C42ns/367ns
Switching Energy1.81mJ (on), 2.02mJ (off)
Test Condition-
Gate Charge550 nC
Current - Collector (Ic) (Max)83 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)300 A
Power - Max549 W

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