IKY50N120CH7XKSA1
IGBT TRENCH FS 1200V 75A TO247-4Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKY50N120CH7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) from the TRENCHSTOP™ series. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capacity of 75 A, with a pulsed current capability of 200 A. It offers a maximum power dissipation of 398 W and a low on-state voltage of 2.15 V at 15 V gate-source voltage and 50 A collector current. The device exhibits a gate charge of 372 nC and switching energies of 1.09 mJ (turn-on) and 1.33 mJ (turn-off). Operating within a temperature range of -40°C to 175°C, the IKY50N120CH7XKSA1 is provided in a PG-TO247-4-U10 package suitable for through-hole mounting. This component is utilized in applications such as industrial motor drives and power supplies.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 86 ns |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 50A |
| Supplier Device Package | PG-TO247-4-U10 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 35ns/331ns |
| Switching Energy | 1.09mJ (on), 1.33mJ (off) |
| Test Condition | - |
| Gate Charge | 372 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 398 W |
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