IKY50N120CH3XKSA1
IGBT 1200V 100A TO247-4Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKY50N120CH3XKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 100 A at 25°C, with a pulsed capability of 200 A. The device offers a low on-state voltage (Vce(on)) of 2.35 V at 15 V gate-emitter voltage and 50 A collector current, ensuring efficient power transfer. With a maximum power dissipation of 652 W and a junction temperature range of -40°C to 175°C, it is suitable for rigorous operating environments. Key switching parameters include a turn-on delay of 32 ns and a turn-off delay of 296 ns at 25°C, with switching energies of 2.3 mJ (on) and 1.9 mJ (off) under test conditions of 600 V, 50 A, 10 Ohm, and 15 V gate drive. The IKY50N120CH3XKSA1 is housed in a PG-TO247-4 package, ideal for through-hole mounting. This IGBT finds application in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 255 ns |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 50A |
| Supplier Device Package | PG-TO247-4 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 32ns/296ns |
| Switching Energy | 2.3mJ (on), 1.9mJ (off) |
| Test Condition | 600V, 50A, 10Ohm, 15V |
| Gate Charge | 235 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 652 W |
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