IKY150N65EH7XKSA1
IGBT TRENCH FS 650V 160A TO247-4Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKY150N65EH7XKSA1 is a TRENCHSTOP™ series Insulated Gate Bipolar Transistor (IGBT). This device features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 160A, with a pulsed capability of 600A. The IGBT Type is Trench Field Stop, and it offers a maximum power dissipation of 621W. Key electrical parameters include a gate charge of 300 nC and a Vce(on) of 1.65V at 15V gate-source voltage and 150A collector current, under test conditions of 400V, 150A, 10 Ohm, 15V. Switching characteristics show a reverse recovery time (trr) of 65 ns, with switching energy values of 2.3mJ (on) and 2.9mJ (off). Turn-on and turn-off delays at 25°C are specified as 44ns and 343ns respectively. The component is housed in a PG-TO247-4-2 package, designed for through-hole mounting. This IGBT is suitable for applications in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 65 ns |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 150A |
| Supplier Device Package | PG-TO247-4-2 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 44ns/343ns |
| Switching Energy | 2.3mJ (on), 2.9mJ (off) |
| Test Condition | 400V, 150A, 10Ohm, 15V |
| Gate Charge | 300 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 621 W |
| Qualification | - |