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IKY120N65EH7XKSA1

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IKY120N65EH7XKSA1

IGBT TRENCH FS 650V 160A TO247-4

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IKY120N65EH7XKSA1 is a 650 V Trench Field Stop IGBT from the TRENCHSTOP™ series. This component features a 160 A continuous collector current (Ic) and a pulsed collector current (Icm) of 480 A. With a maximum power dissipation of 498 W, it is designed for demanding applications. The IGBT exhibits a Vce(on) of 1.65 V at 15 V gate-emitter voltage and 120 A collector current. Key switching characteristics include a gate charge of 244 nC and a reverse recovery time (trr) of 64 ns. Switching energy is rated at 1.7 mJ (on) and 1.5 mJ (off) under test conditions of 400 V, 120 A, 10 Ohm, and 15 V. The IKY120N65EH7XKSA1 is housed in a PG-TO247-4-2 package, suitable for through-hole mounting, and operates within an extended temperature range of -40°C to 175°C (TJ). This device finds application in power conversion systems across various industrial sectors.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)64 ns
Vce(on) (Max) @ Vge, Ic1.65V @ 15V, 120A
Supplier Device PackagePG-TO247-4-2
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C25ns/175ns
Switching Energy1.7mJ (on), 1.5mJ (off)
Test Condition400V, 120A, 10Ohm, 15V
Gate Charge244 nC
Grade-
Current - Collector (Ic) (Max)160 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)480 A
Power - Max498 W
Qualification-

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