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IKY100N120CH7XKSA1

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IKY100N120CH7XKSA1

IGBT TRENCH FS 1200V 212A TO247

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TRENCHSTOP™ IKY100N120CH7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum continuous collector current of 212 A, with a pulsed current capability of 400 A. The IGBT type is Trench Field Stop, offering optimized switching characteristics with a switching energy of 2.37 mJ (on) and 2.65 mJ (off) at specified test conditions. The saturation voltage (Vce(on)) is a maximum of 2.15 V at 15 V gate-emitter voltage and 100 A collector current. The device has a gate charge of 714 nC. Packaged in a PG-TO247-4-U10, it supports through-hole mounting and operates within a temperature range of -40°C to 175°C. It is suitable for power factor correction, motor drives, and renewable energy systems.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)99 ns
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 100A
Supplier Device PackagePG-TO247-4-U10
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C44ns/359ns
Switching Energy2.37mJ (on), 2.65mJ (off)
Test Condition-
Gate Charge714 nC
Current - Collector (Ic) (Max)212 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)400 A
Power - Max721 W

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