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IKW75N60TAFKSA1

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IKW75N60TAFKSA1

IGBT TRENCH/FS 600V 80A TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop® IGBT, part number IKW75N60TAFKSA1, is a 600V, 80A Trench Field Stop Insulated Gate Bipolar Transistor. This component features a collector current (Ic) of 80A and a pulsed collector current (Icm) of 225A. The collector-emitter saturation voltage (Vce(on)) is 2V at 15V gate-emitter voltage and 75A collector current. With a maximum power dissipation of 428W and a junction-to-ambient thermal resistance suitable for its through-hole mounting in the PG-TO247-3-1 package, the IKW75N60TAFKSA1 is engineered for demanding applications. Key parameters include a gate charge of 470 nC and a reverse recovery time (trr) of 121ns. The device is rated for an operating temperature range of -40°C to 175°C (TJ). This IGBT is suitable for use in power factor correction, motor drives, and uninterruptible power supplies.

Additional Information

Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)121 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 75A
Supplier Device PackagePG-TO247-3-1
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C33ns/330ns
Switching Energy4.5mJ
Test Condition400V, 75A, 5Ohm, 15V
Gate Charge470 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)225 A
Power - Max428 W

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