IKW50N65H5AXKSA1
IGBT 650V 80A 305W PG-TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IKW50N65H5AXKSA1 is a 650V, 80A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power applications. This automotive-grade component features a Trench IGBT architecture, offering low switching energy (450µJ on, 160µJ off) and a low on-state voltage (Vce(on) of 2.1V at 15V Vge and 50A Ic). The device boasts a maximum continuous collector current of 80A, with a pulsed capability of 150A, and a power dissipation of 270W. Gate charge is rated at 116 nC, with typical turn-on and turn-off delays of 21ns and 173ns respectively at 25°C. The IKW50N65H5AXKSA1 is supplied in a PG-TO247-3 package for through-hole mounting and operates within a junction temperature range of -40°C to 175°C. Its AEC-Q101 qualification makes it suitable for demanding automotive systems, including electric vehicle powertrains and charging infrastructure.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 58 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Supplier Device Package | PG-TO247-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 21ns/173ns |
| Switching Energy | 450µJ (on), 160µJ (off) |
| Test Condition | 400V, 25A, 12Ohm, 15V |
| Gate Charge | 116 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 270 W |
| Qualification | AEC-Q101 |
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