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IKW50N60TAFKSA1

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IKW50N60TAFKSA1

IGBT TRENCH/FS 600V 80A TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop® IKW50N60TAFKSA1 is a 600V, 80A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This Trench Field Stop IGBT offers a robust 333W maximum power dissipation and a collector current of 80A, with a pulsed capability of 150A. Key performance parameters include a low Vce(on) of 2V at 15V/50A, gate charge of 310 nC, and switching times of 26ns (td(on)) and 299ns (td(off)) at 25°C. The device features a reverse recovery time (trr) of 143ns under specified test conditions (400V, 50A, 7 Ohm, 15V), with a switching energy of 2.6mJ. Packaged in a Through Hole PG-TO247-3-1, it operates within a temperature range of -40°C to 175°C. This component is utilized in industrial automation, power supplies, and motor control systems.

Additional Information

Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)143 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 50A
Supplier Device PackagePG-TO247-3-1
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C26ns/299ns
Switching Energy2.6mJ
Test Condition400V, 50A, 7Ohm, 15V
Gate Charge310 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max333 W

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