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IKW50N60DTPXKSA1

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IKW50N60DTPXKSA1

IGBT TRENCH FS 600V 80A TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop™ IKW50N60DTPXKSA1 is a 600V, 80A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This device features a maximum collector current of 150A (pulsed) and a continuous collector current of 80A. With a maximum power dissipation of 319.2W and a Vce(on) of 1.8V at 15V, 50A, it offers efficient switching characteristics. Key parameters include a gate charge of 249 nC and switching energies of 1.53mJ (on) and 850µJ (off) under test conditions of 400V, 50A, 7 Ohm, and 15V. The IKW50N60DTPXKSA1 utilizes a standard input type and is housed in a PG-TO247-3 package for through-hole mounting. Operating temperature ranges from -40°C to 175°C. This component is suitable for applications in power supplies, motor control, and industrial automation.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)115 ns
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 50A
Supplier Device PackagePG-TO247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C20ns/215ns
Switching Energy1.53mJ (on), 850µJ (off)
Test Condition400V, 50A, 7Ohm, 15V
Gate Charge249 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max319.2 W

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