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IKW30N60DTPXKSA1

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IKW30N60DTPXKSA1

IGBT TRENCH FS 600V 53A TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop™ IKW30N60DTPXKSA1 is a 600V, 53A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This Trench Field Stop IGBT features a low collector-emitter saturation voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 30A collector current, minimizing conduction losses. With a maximum power dissipation of 200W and a pulsed collector current capability of 90A, it is suitable for demanding power conversion tasks. The component offers fast switching characteristics with turn-on delay (Td(on)) of 15ns and turn-off delay (Td(off)) of 179ns at 25°C, and a reverse recovery time (trr) of 76ns. Applications include industrial power supplies, motor drives, and renewable energy systems. The IKW30N60DTPXKSA1 is supplied in a PG-TO247-3 package for through-hole mounting, operating across an extended temperature range of -40°C to 175°C.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)76 ns
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
Supplier Device PackagePG-TO247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C15ns/179ns
Switching Energy710µJ (on), 420µJ (off)
Test Condition400V, 30A, 10.5Ohm, 15V
Gate Charge130 nC
Current - Collector (Ic) (Max)53 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)90 A
Power - Max200 W

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