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IKW25T120FKSA1

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IKW25T120FKSA1

IGBT NPT FS 1200V 50A TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop® IKW25T120FKSA1 is a 1200V NPT Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) featuring a continuous collector current of 50A and a pulsed collector current of 75A. This component is designed for high-efficiency switching applications, with a maximum power dissipation of 190W. The TrenchStop® technology ensures excellent switching performance, indicated by a typical switching energy of 4.2mJ and a gate charge of 155 nC. The on-state voltage (Vce(on)) is a maximum of 2.2V at 15V gate-emitter voltage and 25A collector current, with typical turn-on and turn-off delays of 50ns and 560ns respectively at 25°C. The device operates across a temperature range of -40°C to 150°C. Supplied in a PG-TO247-3-1 package for through-hole mounting, this IGBT is suitable for use in industrial applications such as power supplies, motor drives, and welding equipment.

Additional Information

Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)200 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 25A
Supplier Device PackagePG-TO247-3-1
IGBT TypeNPT, Trench Field Stop
Td (on/off) @ 25°C50ns/560ns
Switching Energy4.2mJ
Test Condition600V, 25A, 22Ohm, 15V
Gate Charge155 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)75 A
Power - Max190 W

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