IKW15N120T2FKSA1
IGBT 1200V 30A 235W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IKW15N120T2FKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 30 A, with a pulsed capability of 60 A. The Trench IGBT architecture ensures excellent switching characteristics, including a typical turn-on delay of 32 ns and turn-off delay of 362 ns at 25°C, with a Vce(on) of 2.2 V at 15 V gate-emitter voltage and 15 A collector current. The maximum power dissipation is 235 W. Operating across a temperature range of -40°C to 175°C, this IGBT is packaged in a PG-TO247-3-1 through-hole configuration. Applications include industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 300 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 32ns/362ns |
| Switching Energy | 2.05mJ |
| Test Condition | 600V, 15A, 41.8Ohm, 15V |
| Gate Charge | 93 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 235 W |
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