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IKW08T120FKSA1

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IKW08T120FKSA1

IGBT NPT FS 1200V 16A TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop® IKW08T120FKSA1 is a 1200V, 16A NPT Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This device features a maximum collector current of 16A (24A pulsed) and a collector-emitter saturation voltage of 2.2V at 15V gate-emitter voltage and 8A collector current. With a maximum power dissipation of 70W and a typical switching energy of 1.37mJ (at 600V, 8A, 81 Ohm, 15V), the IKW08T120FKSA1 offers efficient switching characteristics. The device has a gate charge of 53 nC and a reverse recovery time of 80 ns. It is housed in a PG-TO247-3-1 package for through-hole mounting and operates across a temperature range of -40°C to 150°C (TJ). This component is suitable for applications in industrial power supplies and motor drives.

Additional Information

Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)80 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 8A
Supplier Device PackagePG-TO247-3-1
IGBT TypeNPT, Trench Field Stop
Td (on/off) @ 25°C40ns/450ns
Switching Energy1.37mJ
Test Condition600V, 8A, 81Ohm, 15V
Gate Charge53 nC
Current - Collector (Ic) (Max)16 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)24 A
Power - Max70 W

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