IKQ75N120CT2XKSA1
IGBT TRENCH FS 1200V 150A TO247Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IKQ75N120CT2XKSA1 is a high-performance Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This device features a 1200 V collector-emitter breakdown voltage and a maximum continuous collector current of 150 A, with a pulsed capability of 300 A. Designed for demanding power applications, it offers a maximum power dissipation of 938 W. Key performance parameters include a low on-state voltage of 2.15 V at 15 V gate-emitter voltage and 75 A collector current, and switching energies of 6.7 mJ (turn-on) and 4.1 mJ (turn-off) under test conditions of 600 V, 75 A, 6 Ohm, and 15 V. The IKQ75N120CT2XKSA1 utilizes a standard input type and is housed in a PG-TO247-3-46 package, suitable for through-hole mounting. Operating temperature ranges from -40°C to 175°C (TJ). This component is commonly found in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 75A |
| Supplier Device Package | PG-TO247-3-46 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 37ns/328ns |
| Switching Energy | 6.7mJ (on), 4.1mJ (off) |
| Test Condition | 600V, 75A, 6Ohm, 15V |
| Gate Charge | 370 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 938 W |
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