IKQ75N120CS7XKSA1
IGBT TRENCH 1200V 154A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TRENCHSTOP™ IGBT, part number IKQ75N120CS7XKSA1, is a high-performance Insulated Gate Bipolar Transistor designed for demanding power applications. This device features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 154 A (225 A pulsed). With a maximum power dissipation of 630 W and a low on-state voltage of 2V at 15V gate-emitter voltage and 75A collector current, it ensures efficient operation. Key switching characteristics include a 38ns turn-on delay and 190ns turn-off delay at 25°C, with switching energies of 5.13mJ (on) and 3.48mJ (off) under test conditions of 600V, 75A, 2.1 Ohm, and 15V. The IKQ75N120CS7XKSA1 utilizes trench gate technology for improved performance and is housed in a PG-TO247-3-46 package for through-hole mounting. This component is commonly found in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Supplier Device Package | PG-TO247-3-46 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 38ns/190ns |
| Switching Energy | 5.13mJ (on), 3.48mJ (off) |
| Test Condition | 600V, 75A, 2.1Ohm, 15V |
| Gate Charge | 450 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 154 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 630 W |
| Qualification | - |
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