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IKQ75N120CH7XKSA1

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IKQ75N120CH7XKSA1

IGBT TRENCH FS 1200V 82A TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

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Infineon Technologies TRENCHSTOP™ series IKQ75N120CH7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-power applications. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 82 A, with a pulsed current rating of 300 A. Featuring a low Vce(on) of 2.15V at 15V gate-emitter voltage and 75A collector current, it boasts a maximum power dissipation of 549 W. The device has a gate charge of 518 nC and specified switching energies of 5.28 mJ (turn-on) and 1.76 mJ (turn-off) at 25°C, with turn-on and turn-off delays of 56 ns and 470 ns respectively. The IKQ75N120CH7XKSA1 is housed in a PG-TO247-3-U01 package, suitable for through-hole mounting, and operates within a junction temperature range of -40°C to 175°C. This IGBT is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)149 ns
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 75A
Supplier Device PackagePG-TO247-3-U01
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C56ns/470ns
Switching Energy5.28mJ (on), 1.76mJ (off)
Test Condition-
Gate Charge518 nC
Current - Collector (Ic) (Max)82 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)300 A
Power - Max549 W

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