IKQ75N120CH3XKSA1
IGBT 1200V 150A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKQ75N120CH3XKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This through-hole component offers a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 150A, with a pulsed rating of 300A. The device features a maximum power dissipation of 938W and a low on-state voltage (Vce(on)) of 2.35V at 15V gate-emitter voltage and 75A collector current. Switching characteristics include typical turn-on and turn-off delays of 34ns and 282ns respectively at 25°C, with associated switching energies of 6.4mJ (on) and 2.8mJ (off), tested under 600V, 75A, 6 Ohm, 15V conditions. The IKQ75N120CH3XKSA1 is housed in a PG-TO247-3-46 package, suitable for operation across an extended temperature range of -40°C to 175°C (TJ). This component finds utility in power electronics systems across industries such as industrial motor control, renewable energy inverters, and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 75A |
| Supplier Device Package | PG-TO247-3-46 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 34ns/282ns |
| Switching Energy | 6.4mJ (on), 2.8mJ (off) |
| Test Condition | 600V, 75A, 6Ohm, 15V |
| Gate Charge | 370 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 938 W |
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