IKQ50N120CT2XKSA1
IGBT TRENCH FS 1200V 100A TO247Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IKQ50N120CT2XKSA1 is a high-efficiency Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. This Trench Field Stop IGBT features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 100 A (200 A pulsed). With a maximum power dissipation of 652 W and a low on-state voltage (Vce(on)) of 2.15 V at 15V/50A, it minimizes conduction losses. The device exhibits excellent switching characteristics, with typical turn-on delay (Td(on)) of 34 ns and turn-off delay (Td(off)) of 312 ns at 25°C, and associated switching energies of 3.8 mJ (on) and 3.3 mJ (off). The IKQ50N120CT2XKSA1 utilizes a standard input type and is packaged in a PG-TO247-3-46 through-hole configuration, suitable for industrial power supplies, motor drives, and renewable energy systems. Operating temperature range is -40°C to 175°C.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 50A |
| Supplier Device Package | PG-TO247-3-46 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 34ns/312ns |
| Switching Energy | 3.8mJ (on), 3.3mJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 235 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 652 W |
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