IKQ50N120CH7XKSA1
IGBT TRENCH FS 1200V 71A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TRENCHSTOP™ IKQ50N120CH7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 71 A, with a pulsed capability of 200 A. It boasts a maximum power dissipation of 398 W and a low on-state voltage of 2.15 V at 15 V gate voltage and 50 A collector current. The IKQ50N120CH7XKSA1 offers excellent switching performance with specified switching energies of 2.61 mJ (on) and 1.1 mJ (off), and typical turn-on/off delays of 40 ns and 323 ns respectively. The device operates over an extended temperature range of -40°C to 175°C. Packaged in a PG-TO247-3 through-hole configuration, this IGBT is suitable for use in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 133 ns |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 50A |
| Supplier Device Package | PG-TO247-3-U01 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 40ns/323ns |
| Switching Energy | 2.61mJ (on), 1.1mJ (off) |
| Test Condition | - |
| Gate Charge | 366 nC |
| Current - Collector (Ic) (Max) | 71 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 398 W |
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