IKQ50N120CH3XKSA1
IGBT 1200V 100A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKQ50N120CH3XKSA1 is a 1200V, 100A Insulated Gate Bipolar Transistor (IGBT) suitable for high-power applications. This device features a maximum collector current of 100A and a pulsed collector current of 200A, with a collector-emitter voltage (Vce(on)) of 2.35V at 15V gate-emitter voltage and 50A. The nominal gate charge is 235 nC, contributing to switching times of 34ns (turn-on) and 297ns (turn-off) at 600V, 50A, 10 Ohm, 15V. With a maximum power dissipation of 652W and an operating temperature range of -40°C to 175°C, this IGBT is designed for demanding environments. The component is housed in a PG-TO247-3-46 package for through-hole mounting. Applications include motor drives, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 50A |
| Supplier Device Package | PG-TO247-3-46 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 34ns/297ns |
| Switching Energy | 3mJ (on), 1.9mJ (off) |
| Test Condition | 600V, 50A, 10Ohm, 15V |
| Gate Charge | 235 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 652 W |
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