IKQ40N120CH3XKSA1
IGBT 1200V 80A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IKQ40N120CH3XKSA1 is a robust power semiconductor designed for high-voltage switching applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current (Ic) rating of 80 A, with a pulsed capability of 160 A. The device offers a maximum power dissipation of 500 W, supported by a low on-state voltage (Vce(on)) of 2.35 V at 15 V gate drive and 40 A collector current. Switching characteristics include a gate charge of 190 nC and typical switching energies of 3.3 mJ (on) and 1.3 mJ (off) under test conditions of 400 V, 40 A, 12 Ohm, and 15 V. The IKQ40N120CH3XKSA1 is housed in a PG-TO247-3-46 package for through-hole mounting, suitable for demanding industrial applications including motor drives, power supplies, and renewable energy systems. Operating temperature ranges from -40°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 40A |
| Supplier Device Package | PG-TO247-3-46 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/300ns |
| Switching Energy | 3.3mJ (on), 1.3mJ (off) |
| Test Condition | 400V, 40A, 12Ohm, 15V |
| Gate Charge | 190 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 500 W |
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