IKQ150N65EH7XKSA1
IGBT TRENCH FS 650V 160A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies TRENCHSTOP™ IKQ150N65EH7XKSA1 is a 650V Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a continuous collector current (Ic) rating of 160A and a pulsed collector current (Icm) of 600A. With a maximum power dissipation of 621W and a collector-emitter saturation voltage (Vce(on)) of 1.65V at 15V gate-emitter voltage and 150A collector current, it offers efficient power switching. The device exhibits a typical gate charge of 301 nC and switching energies of 5.8mJ (turn-on) and 5.4mJ (turn-off) at 400V, 150A, and 10 Ohm load. Operating temperature ranges from -40°C to 175°C (TJ). The IKQ150N65EH7XKSA1 is housed in a PG-TO247-3 package, suitable for through-hole mounting. This IGBT is commonly utilized in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 84 ns |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 150A |
| Supplier Device Package | PG-TO247-3-46 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/341ns |
| Switching Energy | 5.8mJ (on), 5.4mJ (off) |
| Test Condition | 400V, 150A, 10Ohm, 15V |
| Gate Charge | 301 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 621 W |
| Qualification | - |
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