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IKQ140N120CH7XKSA1

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IKQ140N120CH7XKSA1

IGBT TRENCH FS 1200V 175A TO247

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TRENCHSTOP™ IKQ140N120CH7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 175 A, with a pulsed current rating of 560 A. The IKQ140N120CH7XKSA1 features a low on-state voltage of 2.15 V at 15 V gate-emitter voltage and 140 A collector current. It is designed for high power applications with a maximum power dissipation of 962 W. Key switching parameters include a gate charge of 970 nC, switching energies of 8.84 mJ (on) and 3.38 mJ (off), and turn-on/turn-off delays of 68 ns/541 ns at 25°C. The device operates within an extended temperature range from -40°C to 175°C. Packaged in a PG-TO247-3-U01 for through-hole mounting, this IGBT is suitable for demanding applications in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)144 ns
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 140A
Supplier Device PackagePG-TO247-3-U01
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C68ns/541ns
Switching Energy8.84mJ (on), 3.38mJ (off)
Test Condition-
Gate Charge970 nC
Current - Collector (Ic) (Max)175 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)560 A
Power - Max962 W

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