IKQ120N65EH7XKSA1
IGBT TRENCH FS 650V 160A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TRENCHSTOP™ IKQ120N65EH7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 160A, with a pulsed current rating of 480A. The Vce(on) is specified at 1.65V maximum at 15V gate-emitter voltage and 120A collector current. With a maximum power dissipation of 498W and low switching energies (4.2mJ on, 3.7mJ off), it is suitable for high-efficiency power conversion. The device offers a gate charge of 251 nC and a reverse recovery time of 82 ns. Operating across a temperature range of -40°C to 175°C (TJ), the IKQ120N65EH7XKSA1 is housed in a PG-TO247-3-46 package, facilitating through-hole mounting. This IGBT is commonly utilized in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 82 ns |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 120A |
| Supplier Device Package | PG-TO247-3-46 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 38ns/287ns |
| Switching Energy | 4.2mJ (on), 3.7mJ (off) |
| Test Condition | 400V, 120A, 10Ohm, 15V |
| Gate Charge | 251 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 480 A |
| Power - Max | 498 W |
| Qualification | - |
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