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IKQ120N120CS7XKSA1

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IKQ120N120CS7XKSA1

IGBT TRENCH FS 1200V 216A TO247

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TRENCHSTOP™ series IKQ120N120CS7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 216 A, with a pulsed capability of 360 A. The device exhibits a low on-state voltage of 2 V at 15 V gate-emitter voltage and 120 A collector current. Its maximum power dissipation is 1004 W. Key switching characteristics include a gate charge of 710 nC and a reverse recovery time of 205 ns. Turn-on and turn-off delays at 25°C are specified as 44 ns and 205 ns, respectively, with switching energies of 10.3 mJ (on) and 5.72 mJ (off). Operating temperature ranges from -40°C to 175°C. The IKQ120N120CS7XKSA1 is supplied in a PG-TO247-3-46 package for through-hole mounting, and is available in tube packaging. This IGBT is suitable for use in industrial power conversion, motor drives, and power supply applications.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)205 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 120A
Supplier Device PackagePG-TO247-3-46
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C44ns/205ns
Switching Energy10.3mJ (on), 5.72mJ (off)
Test Condition-
Gate Charge710 nC
Current - Collector (Ic) (Max)216 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)360 A
Power - Max1004 W

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