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IKQ100N120CS7XKSA1

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IKQ100N120CS7XKSA1

IGBT TRENCH FS 1200V 188A TO247

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TRENCHSTOP™ IKQ100N120CS7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 188 A, with a pulsed capability of 300 A. The device dissipates a maximum power of 824 W and offers low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 100A collector current. Key switching characteristics include a gate charge of 610 nC, with turn-on delay (Td(on)) of 38 ns and turn-off delay (Td(off)) of 200 ns at 25°C. Switching energy is rated at 6.87 mJ for turn-on and 4.71 mJ for turn-off. The IKQ100N120CS7XKSA1 is packaged in a PG-TO247-3-55 through-hole configuration, operating across a temperature range of -40°C to 175°C. This IGBT is suitable for use in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)203 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 100A
Supplier Device PackagePG-TO247-3-55
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C38ns/200ns
Switching Energy6.87mJ (on), 4.71mJ (off)
Test Condition-
Gate Charge610 nC
Current - Collector (Ic) (Max)188 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)300 A
Power - Max824 W

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