IKQ100N120CH7XKSA1
IGBT TRENCH FS 1200V 166A TO247Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TRENCHSTOP™ series IKQ100N120CH7XKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 166 A, with a pulsed current rating of 400 A. The device offers a maximum power dissipation of 721 W and a low on-state voltage of 2.15 V at 15 V gate-emitter voltage and 100 A collector current. With a gate charge of 696 nC and switching energies of 6.7 mJ (on) and 2.52 mJ (off), the IKQ100N120CH7XKSA1 is suitable for demanding switching applications. Its operating temperature range is -40°C to 175°C (TJ). The IGBT is housed in a PG-TO247-3-U01 package, facilitating through-hole mounting. This component is commonly utilized in industrial motor drives, renewable energy systems, and power supply applications.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 148 ns |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 100A |
| Supplier Device Package | PG-TO247-3-U01 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 66ns/547ns |
| Switching Energy | 6.7mJ (on), 2.52mJ (off) |
| Test Condition | - |
| Gate Charge | 696 nC |
| Current - Collector (Ic) (Max) | 166 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 721 W |
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