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IKP20N60TAHKSA1

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IKP20N60TAHKSA1

IGBT 600V 40A 166W TO220-3-1

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop® IKP20N60TAHKSA1 is a 600 V, 40 A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) featuring a maximum power dissipation of 166 W. This component offers a pulsed collector current capability of 60 A and a gate charge of 120 nC. The Vce(on) is rated at 2.05 V at 15 V gate-emitter voltage and 20 A collector current, with typical turn-on and turn-off delays of 18 ns and 199 ns, respectively, at 25°C. The reverse recovery time (trr) is 41 ns. The device operates within a temperature range of -40°C to 175°C (TJ) and is housed in a PG-TO220-3-1 package for through-hole mounting. This IGBT is suitable for applications in power factor correction, motor drives, and uninterruptible power supplies.

Additional Information

Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)41 ns
Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 20A
Supplier Device PackagePG-TO220-3-1
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C18ns/199ns
Switching Energy770µJ
Test Condition400V, 20A, 12Ohm, 15V
Gate Charge120 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)60 A
Power - Max166 W

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