IKP03N120H2XKSA1
IGBT 1200V 9.6A 62.5W TO220-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKP03N120H2XKSA1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 9.6 A, with a pulsed capability of 9.9 A. The device dissipates a maximum power of 62.5 W and exhibits a Vce(on) of 2.8 V at 15 V gate-emitter voltage and 3 A collector current. With a gate charge of 22 nC and switching times of 9.2 ns (turn-on) and 281 ns (turn-off) at 25°C (under specified test conditions), the IKP03N120H2XKSA1 is suitable for applications in industrial motor drives, power supplies, and renewable energy systems. The IGBT is supplied in a PG-TO220-3-1 package, facilitating through-hole mounting. Its operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 42 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
| Supplier Device Package | PG-TO220-3-1 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 9.2ns/281ns |
| Switching Energy | 290µJ |
| Test Condition | 800V, 3A, 82Ohm, 15V |
| Gate Charge | 22 nC |
| Current - Collector (Ic) (Max) | 9.6 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 9.9 A |
| Power - Max | 62.5 W |
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