IKP01N120H2XKSA1
IGBT 1200V 3.2A 28W TO220-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKP01N120H2XKSA1 is a 1200V, 3.2A IGBT designed for power switching applications. This component features a maximum collector power dissipation of 28W and a pulsed collector current capability of 3.5A. The gate charge is specified at 8.6 nC, with typical turn-on and turn-off delays of 13ns and 370ns respectively, under test conditions of 800V, 1A, 241 Ohm, and 15V. The on-state voltage (Vce(on)) is a maximum of 2.8V at 15V gate-emitter voltage and 1A collector current. Reverse recovery time (trr) is 83ns, and switching energy is 140µJ. The IKP01N120H2XKSA1 utilizes a standard input type and is housed in a PG-TO220-3-1 package for through-hole mounting. It operates across a temperature range of -40°C to 150°C (TJ). This device is suitable for use in industrial and renewable energy applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 83 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 1A |
| Supplier Device Package | PG-TO220-3-1 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 13ns/370ns |
| Switching Energy | 140µJ |
| Test Condition | 800V, 1A, 241Ohm, 15V |
| Gate Charge | 8.6 nC |
| Current - Collector (Ic) (Max) | 3.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 3.5 A |
| Power - Max | 28 W |
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