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IKD15N60RFAATMA1

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IKD15N60RFAATMA1

IGBT 600V 30A 250W PG-TO252-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop™ IKD15N60RFAATMA1 is a 600V, 30A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This Trench IGBT features a low collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 15A collector current, with a maximum power dissipation of 240W. The device offers excellent switching characteristics, including a typical on-state delay of 13ns and off-state delay of 160ns, with a switching energy of 270µJ (on) and 250µJ (off) under the test conditions of 400V, 15A, 15 Ohm, and 15V. With a maximum collector current of 30A and pulsed collector current capability of 45A, the IKD15N60RFAATMA1 is suitable for demanding automotive applications, as indicated by its AEC-Q101 qualification. The gate charge is rated at 90 nC, contributing to efficient drive requirements. Packaged in a PG-TO252-3 (TO-252-3, DPAK) surface-mount case, this component operates across a wide temperature range of -40°C to 175°C. The IKD15N60RFAATMA1 is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)74 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 15A
Supplier Device PackagePG-TO252-3
IGBT TypeTrench
Td (on/off) @ 25°C13ns/160ns
Switching Energy270µJ (on), 250µJ (off)
Test Condition400V, 15A, 15Ohm, 15V
Gate Charge90 nC
GradeAutomotive
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)45 A
Power - Max240 W
QualificationAEC-Q101

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