IKD10N60RFAATMA1
IGBT 600V 20A 150W PG-TO252-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKD10N60RFAATMA1 is a TrenchStop™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component offers a 600 V collector-emitter breakdown voltage and a continuous collector current of 20 A, with a pulsed capability of 30 A. Featuring a low saturation voltage of 2.5 V at 15 V gate-emitter voltage and 10 A collector current, it dissipates a maximum power of 150 W. The device exhibits a gate charge of 64 nC and switching times of 12 ns turn-on and 168 ns turn-off at 25°C. With a reverse recovery time of 72 ns and switching energy of 190 µJ (on) and 160 µJ (off), it is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power systems. The IKD10N60RFAATMA1 is supplied in a PG-TO252-3 surface mount package, also known as TO-252-3, DPAK, and is available on tape and reel. Its operating temperature range is -40°C to 175°C.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 72 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | PG-TO252-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 12ns/168ns |
| Switching Energy | 190µJ (on), 160µJ (off) |
| Test Condition | 400V, 10A, 26Ohm, 15V |
| Gate Charge | 64 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 150 W |
| Qualification | AEC-Q101 |
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