IKD10N60RAATMA2
IGBT TRENCH 600V 20A TO252-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies IKD10N60RAATMA2 is a TrenchStop® series Insulated Gate Bipolar Transistor (IGBT) designed for robust power switching applications. This surface mount component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 20A, with a pulsed current rating of 30A. The device offers a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 10A collector current, along with a typical gate charge of 64 nC.
Operating within a temperature range of -40°C to 175°C (TJ), the IKD10N60RAATMA2 dissipates up to 150W of power. Its TO-252-3, DPAK package facilitates efficient thermal management in demanding environments. Key parameters include a reverse recovery time (trr) of 62ns and switching times of 14ns (turn-on) and 192ns (turn-off) at 25°C, specified under a 400V, 10A, 23 Ohm, 15V test condition. This IGBT is suitable for use in industrial power supplies, motor control, and renewable energy systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 62 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Supplier Device Package | PG-TO252-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 14ns/192ns |
| Switching Energy | - |
| Test Condition | 400V, 10A, 23Ohm, 15V |
| Gate Charge | 64 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 150 W |