IKD10N60R
IGBT TRENCH 600V 20A TO252-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKD10N60R is a TrenchStop® series Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current of 20 A, with a pulsed current capability of 30 A. The Vce(on) is specified at a maximum of 2.1 V at 15 V gate-emitter voltage and 10 A collector current. With a gate charge of 64 nC and switching times of 14 ns (turn-on) and 192 ns (turn-off) at 25°C, it facilitates efficient operation. The device has a maximum power dissipation of 150 W and an operating temperature range of -40°C to 175°C. Packaged in a PG-TO252-3-11 (TO-252-3, DPAK) surface-mount configuration and supplied on tape and reel, the IKD10N60R is suitable for use in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 62 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Supplier Device Package | PG-TO252-3-11 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 14ns/192ns |
| Switching Energy | 590µJ |
| Test Condition | 400V, 10A, 23Ohm, 15V |
| Gate Charge | 64 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 150 W |
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