IKD08N65ET6ARMA1
IGBT TRENCH FS 650V 15A TO252-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IKD08N65ET6ARMA1 is a 650 V Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a maximum continuous collector current (Ic) of 15 A and a pulsed collector current (Icm) of 25 A. The device exhibits low switching energy with typical values of 110 µJ (on) and 40 µJ (off) at the specified test conditions of 400 V, 5 A, 47 Ohm, and 15 V. With a typical gate charge of 17 nC and a collector-emitter saturation voltage (Vce(on)) of 1.9 V at 15 V/5 A, it offers efficient switching performance. The IGBT is housed in a PG-TO252-3 (DPAK) surface mount package, suitable for automated assembly. Its operating temperature range is -40°C to 175°C (TJ), and it is supplied in Tape & Reel packaging. This component is utilized in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 43 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 5A |
| Supplier Device Package | PG-TO252-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 20ns/59ns |
| Switching Energy | 110µJ (on), 40µJ (off) |
| Test Condition | 400V, 5A, 47Ohm, 15V |
| Gate Charge | 17 nC |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 25 A |
| Power - Max | 47 W |
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