IKD06N65ET6ARMA1
IGBT TRENCH FS 650V 9A TO252-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IKD06N65ET6ARMA1 is a 650 V, 9 A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This device features a low Vce(on) of 1.9V at 3A, 15V Vge, and a maximum collector current of 9A, with a pulsed capability of 18A. The IKD06N65ET6ARMA1 exhibits a gate charge of 13.7 nC and switching energies of 60µJ (turn-on) and 30µJ (turn-off) under typical test conditions (400V, 3A, 47Ohm, 15V). It offers a maximum power dissipation of 31 W and operates within a temperature range of -40°C to 175°C. The component is supplied in a PG-TO252-3 (DPAK) surface mount package, delivered on Tape & Reel. This IGBT is suitable for applications in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 3A |
| Supplier Device Package | PG-TO252-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 15ns/35ns |
| Switching Energy | 60µJ (on), 30µJ (off) |
| Test Condition | 400V, 3A, 47Ohm, 15V |
| Gate Charge | 13.7 nC |
| Current - Collector (Ic) (Max) | 9 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 31 W |
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