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IKD06N60RAATMA1

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IKD06N60RAATMA1

IGBT TRENCH FS 600V 12A TO252-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop™ series IKD06N60RAATMA1 is a 600V, 12A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This component offers a low collector-emitter saturation voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 6A collector current, with a maximum continuous collector current of 12A and pulsed collector current of 18A. Featuring a gate charge of 48 nC and switching energies of 110µJ (on) and 220µJ (off) under test conditions of 400V, 6A, and 23 Ohm with a 15V gate drive, the IKD06N60RAATMA1 provides optimized switching characteristics with typical turn-on and turn-off delays of 12ns and 127ns respectively at 25°C. The device is housed in a surface mount PG-TO252-3 (DPAK) package, with a maximum power dissipation of 100W and an operating temperature range of -40°C to 175°C. Its robust design makes it suitable for use in power factor correction, uninterruptible power supplies, and motor control applications. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)68 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 6A
Supplier Device PackagePG-TO252-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C12ns/127ns
Switching Energy110µJ (on), 220µJ (off)
Test Condition400V, 6A, 23Ohm, 15V
Gate Charge48 nC
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)18 A
Power - Max100 W

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