IKD04N60RFAATMA1
IGBT 600V 8A 75W TO252-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IKD04N60RFAATMA1 is a 600V, 8A Insulated Gate Bipolar Transistor (IGBT) designed for surface mount applications within a PG-TO252-3 (DPAK) package. This automotive-grade component features a Trench IGBT structure, offering a maximum collector power dissipation of 75W. Key electrical characteristics include a Vce(on) of 2.5V at 4A and 15V, with a pulsed collector current (Icm) of 12A. The device exhibits a gate charge of 27 nC and a reverse recovery time (trr) of 34 ns. Switching energy is specified at 60µJ (on) and 50µJ (off) under test conditions of 400V, 4A, 43 Ohm, and 15V. Operating temperature range is -40°C to 175°C (TJ). This component is commonly utilized in automotive power electronics and industrial motor control applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 34 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
| Supplier Device Package | PG-TO252-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 12ns/116ns |
| Switching Energy | 60µJ (on), 50µJ (off) |
| Test Condition | 400V, 4A, 43Ohm, 15V |
| Gate Charge | 27 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 12 A |
| Power - Max | 75 W |
| Qualification | AEC-Q101 |
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