IKD04N60RF
IGBT 600V 8A 75W TO252-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKD04N60RF is a TrenchStop® series Insulated Gate Bipolar Transistor (IGBT) with a 600 V collector-emitter breakdown voltage. This component features a continuous collector current capability of 8 A and a pulsed collector current of 12 A, with a maximum power dissipation of 75 W. The Vce(on) is rated at 2.5 V maximum at 15 V gate-emitter voltage and 4 A collector current. The gate charge is 27 nC, and it exhibits typical turn-on and turn-off delays of 12 ns and 116 ns respectively at 25°C. This IGBT is designed for surface mounting within the PG-TO252-3 package. It is suitable for applications requiring efficient switching in power conversion systems, including industrial power supplies and motor control. The operating temperature range is -40°C to 175°C.
Additional Information
Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 34 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
| Supplier Device Package | PG-TO252-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 12ns/116ns |
| Switching Energy | 110µJ |
| Test Condition | 400V, 4A, 43Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 12 A |
| Power - Max | 75 W |