IKB20N60TAATMA1
IGBT 600V 40A TO263-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IKB20N60TAATMA1 is a 600V, 40A N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This Trench Field Stop IGBT features a low collector-emitter saturation voltage (Vce(on)) of 2.05V at 15V Vge and 20A Ic, with a collector current (Ic) rating of 40A and a pulsed collector current (Icm) of 60A. The device boasts a maximum power dissipation of 156W and a typical gate charge of 120 nC. Switching performance is characterized by a turn-on delay (Td(on)) of 18ns and a turn-off delay (Td(off)) of 199ns at 25°C, with a reverse recovery time (trr) of 41ns. Switching energy figures are 310µJ (on) and 460µJ (off). Packaged in a surface mount PG-TO263-3 (TO-263AB) with Tape & Reel (TR) packaging, this component is suitable for industrial applications including power supplies, motor control, and solar inverters. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 41 ns |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 20A |
| Supplier Device Package | PG-TO263-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 18ns/199ns |
| Switching Energy | 310µJ (on), 460µJ (off) |
| Test Condition | 600V, 20A, 12Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 156 W |
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