IKB03N120H2ATMA1
IGBT 1200V 9.6A 62.5W TO263-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKB03N120H2ATMA1 is a 1200V, 9.6A Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a maximum collector power dissipation of 62.5W and a pulsed collector current capability of 9.9A. The device operates with a standard input type and has a gate charge of 22 nC. Its on-state voltage (Vce(on)) is rated at 2.8V at 15V gate-emitter voltage and 3A collector current, with a switching energy of 290µJ under test conditions of 800V, 3A, 82 Ohm, and 15V. The turn-on and turn-off delay times are specified as 9.2ns and 281ns respectively, at 25°C. The IKB03N120H2ATMA1 is housed in a PG-TO263-3-2 package, also known as TO-263-3, D2PAK, suitable for surface mounting. It is supplied in Tape & Reel packaging and can operate across a temperature range of -40°C to 150°C (TJ). This IGBT is utilized in industries such as industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 42 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
| Supplier Device Package | PG-TO263-3-2 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 9.2ns/281ns |
| Switching Energy | 290µJ |
| Test Condition | 800V, 3A, 82Ohm, 15V |
| Gate Charge | 22 nC |
| Current - Collector (Ic) (Max) | 9.6 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 9.9 A |
| Power - Max | 62.5 W |
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