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IKA08N65ET6XKSA1

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IKA08N65ET6XKSA1

IGBT TRENCH FS 650V 11A TO220-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop™ IKA08N65ET6XKSA1 is a 650V, 11A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) in a PG-TO220-3-FP package. This component offers a maximum collector current of 11A and a pulsed collector current of 25A. Key characteristics include a gate charge of 17 nC and a Vce(on) of 1.9V at 15V gate-source voltage and 5A collector current. Switching performance is detailed with a typical turn-on delay of 20ns and turn-off delay of 59ns at 25°C, and switching energy values of 110µJ for turn-on and 40µJ for turn-off, tested under 400V, 5A, 47 Ohm, 15V conditions. The device operates within a -40°C to 175°C junction temperature range and has a maximum power dissipation of 33W. This IGBT is suitable for applications in power factor correction, motor drives, and uninterruptible power supplies.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)43 ns
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 5A
Supplier Device PackagePG-TO220-3-FP
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C20ns/59ns
Switching Energy110µJ (on), 40µJ (off)
Test Condition400V, 5A, 47Ohm, 15V
Gate Charge17 nC
Current - Collector (Ic) (Max)11 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)25 A
Power - Max33 W

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