IKA03N120H2XKSA1
IGBT 1200V 8.2A 29W TO220-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies' IKA03N120H2XKSA1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 8.2 A (9 A pulsed). With a maximum power dissipation of 29 W, it offers efficient operation in power factor correction, motor control, and lighting systems across industrial automation and power supply sectors. Key parameters include a gate charge of 8.6 nC and a switching energy of 290 µJ, with typical turn-on and turn-off times of 9.2 ns and 281 ns, respectively, under test conditions of 800 V, 3 A, 82 Ohm, and 15 V. The IGBT exhibits a Vce(on) of 2.8 V at 15 V and 3 A, and a reverse recovery time (trr) of 52 ns. The IKA03N120H2XKSA1 is housed in a standard PG-TO220-3-31 package, suitable for through-hole mounting, and operates within an ambient temperature range of -40°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 52 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
| Supplier Device Package | PG-TO220-3-31 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 9.2ns/281ns |
| Switching Energy | 290µJ |
| Test Condition | 800V, 3A, 82Ohm, 15V |
| Gate Charge | 8.6 nC |
| Current - Collector (Ic) (Max) | 8.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 9 A |
| Power - Max | 29 W |
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