IHY20N135R3XKSA1
IGBT 1350V 40A 310W TO247HC-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IGBT, part number IHY20N135R3XKSA1, is a high-performance discrete power semiconductor designed for demanding applications. This component features a 1350V collector-emitter breakdown voltage and a continuous collector current capability of 40A, with a pulsed current rating of 60A. The IHY20N135R3XKSA1 utilizes trench gate technology for enhanced switching characteristics, offering low conduction losses with a Vce(on) of 1.8V at 15V gate-source voltage and 20A collector current. The device dissipates a maximum of 310W and has a gate charge of 195 nC. It is supplied in a PG-TO247HC-3 package for through-hole mounting and operates across a wide temperature range from -40°C to 175°C. Switching energy is rated at 1.3mJ (off) under test conditions of 600V, 20A, 15 Ohm, 15V. This IGBT is suitable for use in various power conversion systems, including industrial motor drives and renewable energy applications.
Additional Information
Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 20A |
| Supplier Device Package | PG-TO247HC-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | -/335ns |
| Switching Energy | 1.3mJ (off) |
| Test Condition | 600V, 20A, 15Ohm, 15V |
| Gate Charge | 195 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 310 W |
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