IHY15N120R3XKSA1
IGBT 1200V 30A 254W TO247HC-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IGBT IHY15N120R3XKSA1 is a high-performance insulated gate bipolar transistor designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current of 30A, with a pulsed capability of 45A. The TrenchStop® IGBT technology offers excellent switching characteristics, evidenced by a typical turn-off delay of 300ns at 25°C, with a switching energy of 700µJ (off) under test conditions. The on-state voltage drop is rated at a maximum of 1.7V at 15V gate-emitter voltage and 15A collector current. With a maximum power dissipation of 254W, this device is housed in a PG-TO247HC-3 package, suitable for through-hole mounting. The specified operating temperature range is -40°C to 175°C (TJ). This Infineon Technologies IGBT is commonly utilized in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 15A |
| Supplier Device Package | PG-TO247HC-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | -/300ns |
| Switching Energy | 700µJ (off) |
| Test Condition | 600V, 15A, 14.6Ohm, 15V |
| Gate Charge | 165 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 254 W |
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