IHW30N90TFKSA1
IGBT 900V 60A 428W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IGBT, part number IHW30N90TFKSA1, is a high-performance N-channel insulated gate bipolar transistor. This component features a 900 V collector-emitter breakdown voltage and a continuous collector current capability of 60 A at a maximum power dissipation of 428 W. The Trench Field Stop technology ensures optimized switching characteristics, with typical turn-on delay of 45 ns and turn-off delay of 556 ns at 25°C under test conditions of 600 V, 30 A, 15 Ohm, and 15 V. The gate charge is specified at 280 nC, and the on-state voltage (Vce(on)) is a maximum of 1.7 V at 15 V gate-emitter voltage and 30 A collector current. It is housed in a PG-TO247-3-1 package, suitable for through-hole mounting. The operating temperature range is from -40°C to 175°C. This device is commonly utilized in industrial applications such as power supplies, motor control, and power factor correction.
Additional Information
Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 30A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/556ns |
| Switching Energy | 1.8mJ (off) |
| Test Condition | 600V, 30A, 15Ohm, 15V |
| Gate Charge | 280 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 428 W |
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