IHW30N90R
IGBT 900V 60A 454W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IHW30N90R is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 900V collector-emitter breakdown voltage and a continuous collector current capability of 60A, with a pulsed capability of 90A. The IHW30N90R offers a maximum power dissipation of 454W and a low on-state voltage of 1.7V at 15V, 30A. Its typical switching characteristics include a gate charge of 200 nC and a turn-off delay of 511ns at 25°C. Packaged in a PG-TO247-3-1 (TO247-3) through-hole format, this IGBT is suitable for demanding power conversion tasks across industries such as industrial motor control, renewable energy systems, and high-voltage power supplies. The operating temperature range is from -40°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 30A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/511ns |
| Switching Energy | 1.46mJ |
| Test Condition | 600V, 30A, 15Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 454 W |
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