IHW30N160R2FKSA1
IGBT 1600V 60A 312W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IHW30N160R2FKSA1 is a high-performance NPT, Trench Field Stop Insulated Gate Bipolar Transistor. This device features a 1600 V collector-emitter breakdown voltage and a continuous collector current capability of 60 A, with a pulsed current rating of 90 A. The IHW30N160R2FKSA1 offers a maximum power dissipation of 312 W and a low on-state voltage of 2.1 V at 15 V gate-emitter voltage and 30 A collector current. Its switching characteristics include a turn-off delay of 525 ns at 25°C, with a switching energy of 4.37 mJ under specified test conditions. The component is housed in a PG-TO247-3-1 package, suitable for through-hole mounting and operating across a temperature range of -40°C to 175°C. This IGBT is commonly utilized in industrial applications such as motor drives, power supplies, and renewable energy systems.
Additional Information
Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | NPT, Trench Field Stop |
| Td (on/off) @ 25°C | -/525ns |
| Switching Energy | 4.37mJ |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 94 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1600 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 312 W |
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