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IHW30N120R3FKSA1

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IHW30N120R3FKSA1

IGBT 1200V 60A 349W TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop® IHW30N120R3FKSA1 is a 1200V, 60A insulated gate bipolar transistor (IGBT) designed for high-power applications. This device features a maximum power dissipation of 349W and a pulsed collector current capability of 90A. The TrenchStop® technology ensures low on-state voltage and fast switching performance, with a typical Vce(on) of 1.75V at 15V gate-source voltage and 30A collector current. The gate charge is specified at 263 nC, and switching energy (off) is 1.47mJ under test conditions of 600V and 30A. The IHW30N120R3FKSA1 is housed in a PG-TO247-3-1 package for through-hole mounting and operates within an extended temperature range of -40°C to 175°C. Its robust design makes it suitable for use in motor drives, power supplies, and industrial automation.

Additional Information

Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.75V @ 15V, 30A
Supplier Device PackagePG-TO247-3-1
IGBT Type-
Td (on/off) @ 25°C-/326ns
Switching Energy1.47mJ (off)
Test Condition600V, 30A, 10Ohm, 15V
Gate Charge263 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)90 A
Power - Max349 W

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